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DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technologyElectrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.
Document ID
19770049543
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Gosney, W. M.
(Texas Instruments Semiconductor Research and Engineering Laboratory Dallas, Tex., United States)
Date Acquired
August 8, 2013
Publication Date
May 1, 1977
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-24
Subject Category
Electronics And Electrical Engineering
Accession Number
77A32395
Funding Number(s)
CONTRACT_GRANT: NAS1-13610
Distribution Limits
Public
Copyright
Other

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