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All-ion-implantation process for integrated circuitsSimpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.
Document ID
19780000590
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Woo, D. S. (RCA Corp.)
Date Acquired
August 9, 2013
Publication Date
March 1, 1979
Publication Information
Publication: NASA Tech Briefs
Volume: 3
Issue: 4
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-23995
Accession Number
78B10590
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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