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Record Details

Record 31 of 2465
All-ion-implantation process for integrated circuits
Author and Affiliation:
Woo, D. S.(RCA Corp.)
Abstract: Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.
Publication Date: Mar 01, 1979
Document ID:
19780000590
(Acquired Nov 04, 1995)
Accession Number: 78B10590
Subject Category: FABRICATION TECHNOLOGY
Report/Patent Number: MFS-23995
Document Type: NASA Tech Brief
Publication Information: NASA Tech Briefs (ISSN 0145-319X); 3; 4; P. 621
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: NASA Marshall Space Flight Center; Huntsville, AL, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: AVALANCHE DIODES; CAPACITORS; CARRIER INJECTION; INTEGRATED CIRCUITS; ION IMPLANTATION; METAL OXIDE SEMICONDUCTORS; TRANSISTORS
Availability Source: National Technology Transfer Center (NTTC), Wheeling, WV
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