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Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layersQuantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.
Document ID
19780005590
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Watanabe, M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Actor, G.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage
Subject Category
Energy Production And Conversion
Accession Number
78N13533
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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