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Record 73 of 585
Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers
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Author and Affiliation:
Gatos, H. C.(Massachusetts Inst. of Tech., Cambridge, MA, United States)
Watanabe, M.(Massachusetts Inst. of Tech., Cambridge, MA, United States)
Actor, G.(Massachusetts Inst. of Tech., Cambridge, MA, United States)
Abstract: Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.
Publication Date: Jan 01, 1977
Document ID:
19780005590
(Acquired Nov 18, 1995)
Accession Number: 78N13533
Subject Category: ENERGY PRODUCTION AND CONVERSION
Document Type: Conference Paper
Publication Information: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage; p 59-68
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Massachusetts Inst. of Tech.; Cambridge, MA, United States
Description: 10p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: ENERGY CONVERSION EFFICIENCY; MINORITY CARRIERS; RECOMBINATION REACTIONS; SILICON; SURFACE LAYERS; CARRIER LIFETIME; DOPED CRYSTALS; ELECTRON BEAMS; ELECTRON MICROSCOPY; ENERGY LEVELS
Imprint And Other Notes: In NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage p 59-68 (SEE N78-13527 04-44)
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