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Transmutation doping of silicon solar cellsNormal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.
Document ID
Document Type
Conference Paper
Wood, R. F.
(Oak Ridge National Lab. TN, United States)
Westbrook, R. D.
(Oak Ridge National Lab. TN, United States)
Young, R. T.
(Oak Ridge National Lab. TN, United States)
Cleland, J. W.
(Oak Ridge National Lab. TN, United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage
Subject Category
Energy Production And Conversion
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.
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