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EPR and transient capacitance studies on electron-irradiated silicon solar cellsOne and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.
Document ID
19780005604
Document Type
Conference Paper
Authors
Lee, Y. H. (State Univ. of New York Albany, NY, United States)
Cheng, L. J. (State Univ. of New York Albany, NY, United States)
Mooney, P. M. (State Univ. of New York Albany, NY, United States)
Corbett, J. W. (State Univ. of New York Albany, NY, United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage
Subject Category
ENERGY PRODUCTION AND CONVERSION
Funding Number(s)
CONTRACT_GRANT: N00014-75-C-0919
CONTRACT_GRANT: NSG-3095
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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