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Analysis of effects of impurities intentionally incorporated into siliconA methodology was developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed.
Document ID
19780015621
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Uno, F. (Spectrolab, Inc. Sylmar, CA, United States)
Date Acquired
September 3, 2013
Publication Date
December 15, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
ERDA/JPL-954694-78/1
NASA-CR-156981
Report Number: ERDA/JPL-954694-78/1
Report Number: NASA-CR-156981
Accession Number
78N23564
Funding Number(s)
CONTRACT_GRANT: JPL-954694
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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