Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cellsSolar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.
Document ID
19780027033
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Rahilly, W. P. (USAF, Aero Propulsion Laboratory, Wright-Patterson AFB Ohio, United States)
Scott-Monck, J. (Spectrolab, Inc. Sylmar, Calif., United States)
Anspaugh, B. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Locker, D. (USAF, Avionics Laboratory, Wright-Patterson AFB Ohio, United States)