Fabrication of OSOS cells by neutral ion beam sputteringOxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.
Document ID
19780027153
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Burk, D. E. (Colorado State Univ. Fort Collins, CO, United States)
Dubow, J. B. (Colorado State Univ. Fort Collins, CO, United States)
Sites, J. R. (Colorado State University Fort Collins, Colo., United States)