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Surface photovoltage due to photo-thermo-ionization of surface states - GaAsSurface photovoltage spectroscopy was employed for studying the mechanism of subbandgap photoionization transitions from surface states in GaAs surfaces. It was found that the photoionization cross-section exhibits a maximum for a photon energy of about 0.9 eV. This finding indicates a photo-thermal mechanism of photovoltage, i.e., photo-induced transitions between surface state levels and the subsequent thermal ejection of electrons from the upper level into the conduction band.
Document ID
19780032485
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0039-6028(77)90161-3
Authors
Morawski, A. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Slusarczuk, M. M. G. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (MIT Cambridge, Mass., United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 9, 2013
Publication Date
December 1, 1977
Publication Information
Publication: Surface Science
Volume: 69
Issue: 1, De
Subject Category
Solid-State Physics
Accession Number
78A16394
Distribution Limits
Public
Copyright
Other

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