Zn diffusion in Al/0.7/Ga/0.3/As compared with that in GaAs

Zinc was diffused into 4 times 10 to the 17th per cu cm n-type Al(0.7)Ga(0.3)As grown by liquid-phase epitaxy and also into n-type 2 times 10 to the 17th per cu cm doped GaAs slices at 600, 650, and 750 C. The Zn diffusion coefficient in the Al(0.7)Ga(0.3)As was about one order of magnitude larger than in GaAs. The significance of this fact is that diffusion of Zn through a 0.5 micron Al(0.7)Ga(0.3)As layer appears to be possible with adequate control of the junction depth in the underlying GaAs.