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sem analysis of ionizing radiation effects in linear integrated circuitsA successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.
Document ID
19780035645
Document Type
Reprint (Version printed in journal)
Authors
Stanley, A. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gauthier, M. K.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
December 1, 1977
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other