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Diffusion lengths in amphoteric GaAs heteroface solar cellsMinority-carrier diffusion lengths in amphoteric GaAs:Si were investigated. Electron and hole diffusion lengths in p- and n-type, respectively, were determined to be 13 microns and 7 microns. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs:Si p-n junctions indicated that these devices should make excellent solar cells.
Document ID
19780045286
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.90051
Authors
Ashley, K. L. (Southern Methodist Univ. Dallas, TX, United States)
Beal, S. W. (Southern Methodist University Dallas, Tex., United States)
Date Acquired
August 9, 2013
Publication Date
March 15, 1978
Publication Information
Publication: Applied Physics Letters
Volume: 32
Subject Category
Energy Production And Conversion
Accession Number
78A29195
Distribution Limits
Public
Copyright
Other

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