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An exact derivation of contact resistance to planar devicesA mixed boundary-value problem is formulated for an imperfect rectangular contact to a semiconducting sheet (layer). An exact model for derivation of contact resistance is developed and its solution by conformal mapping and eigenfunction expansion is presented. The expression for contact resistance is similar to that for a perfect (lossless) contact but includes an additional term containing the lowest-order coefficient in the infinite series expansion of the complex potential function. The calculated contact resistances are compared with those obtained from three approximate models: lossless contact, transmission line, and extended transmission line models. The extended transmission line model appears to be a very satisfactory approximation provided the ratio of contact length to sheet thickness is no less than 0.5.
Document ID
19780053552
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Schuldt, S. B.
(Honeywell Corporate Technology Center Bloomington, Minn., United States)
Date Acquired
August 9, 2013
Publication Date
May 1, 1978
Publication Information
Publication: Solid-State Electronics
Volume: 21
Subject Category
Electronics And Electrical Engineering
Accession Number
78A37461
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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