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Cathodoluminescence of Al/x/Ga/1-x/As grown by liquid-phase epitaxySmall-area contrast fluctuations observed in cathodoluminescence-mode SEM images of thin Al(x)Ga(1-x)As layers grown by liquid-phase epitaxy on GaAs:Cr substrates are attributed to local variations in alloy composition. Quantitative estimates of the composition excursions are obtained from the variations in CL intensity by calibration against compositions known from electron-probe microanalysis. In a typical sample, the CL variations are shown to correspond to peak-to-peak fluctuations of about 1 at. % of Al and occur over irregular regions generally in the range 6-20 microns in diameter.
Document ID
19780054617
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Levin, E. R.
(Radio Corp. of America Princeton, NJ, United States)
Ladany, I.
(RCA Laboratories Princeton, N.J., United States)
Date Acquired
August 9, 2013
Publication Date
June 1, 1978
Publication Information
Publication: Journal of Applied Physics
Volume: 49
Subject Category
Solid-State Physics
Accession Number
78A38526
Distribution Limits
Public
Copyright
Other

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