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Stabilization of n-type semiconductors to photoanodic dissolution by competitive electron transfer processesThe behavior of n-type CdX (X = S, Se, Te) and GaP, GaAs, and InP in alkaline electrolytes containing X(--) and X sub n(--) ions is reviewed. Of the 18 combinations of electrode and electrolyte, 12 alliances are completely stable to photoanodic dissolution of the n-type photoanode. In each case the oxidation of the chalcogenide species at the photoanode is reversed at the cathode to complete an electrochemical cycle involving no net chemical change. The best system in terms of light-to-electric energy conversion seems to be the CdTe-based cell employing the Te(--)/Te2(--) electrolyte, with roughly 10% efficiency at an output voltage of 0.35 V for monochromatic 633 nm input optical energy at about 25 mW/sq cm.
Document ID
19780055553
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Wrighton, M. S.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Bocarsly, A. B.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Bolts, J. M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Ellis, A. B.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Legg, K. D.
(MIT Cambridge, Mass., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Subject Category
Inorganic And Physical Chemistry
Meeting Information
Meeting: Conference on the Electrochemistry and Physics of Semiconductor Liquid Interfaces under Illumination
Location: Airlie, VA
Start Date: May 3, 1977
End Date: May 5, 1977
Accession Number
78A39462
Distribution Limits
Public
Copyright
Other

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