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Quantum statistical theory of semiconductor junctions in thermal equilibriumFree carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.
Document ID
19780058901
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Von Roos, O.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
December 15, 1977
Publication Information
Publication: Physical Review B - Solid State
Subject Category
Solid-State Physics
Accession Number
78A42810
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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