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Thermal stability of the work function of NEA type surfacesThe work-function stability of both Si(100) and Ge(100) surfaces activated with adsorptions of cesium and oxygen has been determined. In general, it has been found that the highest temperature to which the optimized Ge surface could be heated without an increase in its work function (1.06 eV) was about 200 C, whereas the optimized Si surface could be heated to approximately 250 C without a significant increase in the optimized work function (0.93 eV). Details are also presented on various characteristics of cesium and oxygen adsorption-desorption on these surfaces.
Document ID
19780069466
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Edwards, D., Jr.
(Minnesota Univ. Minneapolis, MN, United States)
Peria, W. T.
(Minnesota, University Minneapolis, Minn., United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1978
Publication Information
Publication: Applications of Surface Science
Volume: 1
Subject Category
Inorganic And Physical Chemistry
Accession Number
78A53375
Distribution Limits
Public
Copyright
Other

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