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Silicon source for vacuum depositionDevice using two independent silicon sources for ultra-high-vacuum deposition on large substrates can deposit P and N types of silicon simultaneously. Efficient water cooled copper shield supports and cools structure and isolates two filaments.
Document ID
19790000076
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Racette, G. W. (General Electric Co.)
Rutecki, D. J. (General Electric Co.)
Date Acquired
August 10, 2013
Publication Date
August 1, 1979
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 1
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
LAR-12356
Accession Number
79B10076
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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