NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Germanium-on-InP heterojunction-structure LEDGe-on-InP heterojunction structure LED has been developed where in Ge film is evaporated onto commercially available InP substrate. Forward bias of device is approximately 1 volt, and it emits light in 9.800 angstrom region. Technique permits easy and inexpensive fabrication of LED for application at this wavelength.
Document ID
19790000488
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z.
(RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-12349
Accession Number
79B10488
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available