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Improved thermal-conducting and current-confining filmGe film that replaces SiO2 coating in method of fabricating room-temperature CW laser diodes achieves greater heat dissipation while maintaining effectiveness as current-confining medium. Film also lessens certain unwanted strain parameters and ultimately increases lifetime of lasers. Method is applicable to fabrication of InP and (AlGa)As CW lasers.
Document ID
19790000489
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-12350
Accession Number
79B10489
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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