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Scratch encourages selective dopingDislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.
Document ID
19790000558
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA Corp.)
Kressel, H. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-11590
Accession Number
79B10558
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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