NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Properties of GaN grown on sapphire substratesEpitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.
Document ID
19790034316
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Crouch, R. K.
(NASA Langley Research Center Hampton, VA, United States)
Debnam, W. J.
(NASA Langley Research Center Hampton, VA, United States)
Fripp, A. L.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 9, 2013
Publication Date
November 1, 1978
Publication Information
Publication: Journal of Materials Science
Volume: 13
Subject Category
Solid-State Physics
Accession Number
79A18329
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available