Beta-to-alpha transformation in polycrystalline SiC. II - Interfacial energetics

A phenomenological analysis of the energetics of the beta-to-alpha transformation in polycrystalline SiC is presented. It is found that the extreme anisotropy of the interfacial energy between alpha- and beta-SiC can account for the rapid growth of composite grains into the beta matrix during conventional sintering or hot-pressing processes. The composite grains consist of alpha-SiC plates 'sandwiched' between well-oriented and recrystallized beta-SiC 'envelopes'. The interfaces involving the 111 plane type of beta and (0001) of alpha have much lower energies than random beta/alpha interfaces.