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Pulsed-electron-beam annealing of ion-implantation damageShort-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.
Document ID
19790041726
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Greenwald, A. C.
(Spire Corp. Bedford, MA, United States)
Kirkpatrick, A. R.
(Spire Corp. Bedford, MA, United States)
Little, R. G.
(Spire Corp. Bedford, MA, United States)
Minnucci, J. A.
(Spire Corp. Bedford, Mass., United States)
Date Acquired
August 9, 2013
Publication Date
February 1, 1979
Publication Information
Publication: Journal of Applied Physics
Volume: 50
Subject Category
Solid-State Physics
Accession Number
79A25739
Distribution Limits
Public
Copyright
Other

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