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Static compression of Al2O3 to 1.2 Mbars /120 GPa/Pressures up to 120 GPa were generated when a diamond indentor of radius 10.0 micrometers was pressed against a very thin sample of Al2O3 on a diamond flat. The thin film of Al2O3 was prepared by sputtering of aluminum in an oxygen atmosphere. From the measurement of the electrical resistance of Al2O3 as a function of pressure it was found that Al2O3 remains an insulator at the highest pressure studied, namely, 120 GPa.
Document ID
19790041729
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Gupta, M. C.
(Cornell Univ. Ithaca, NY, United States)
Ruoff, A. L.
(Cornell University Ithaca, N.Y., United States)
Date Acquired
August 9, 2013
Publication Date
February 1, 1979
Publication Information
Publication: Journal of Applied Physics
Volume: 50
Subject Category
Nonmetallic Materials
Accession Number
79A25742
Distribution Limits
Public
Copyright
Other

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