NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, ProceedingsRadiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.
Document ID
19790046113
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Simons, M.
(Research Triangle Institute Research Triangle Park, N.C., United States)
Date Acquired
August 9, 2013
Publication Date
December 1, 1978
Subject Category
Electronics And Electrical Engineering
Accession Number
79A30126
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available