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LaF3 insulators for MIS structuresThin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
Document ID
19790053674
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Sher, A.
(College of William and Mary Williamsburg, VA, United States)
Tsuo, Y. H.
(College of William and Mary Williamsburg, VA, United States)
Moriarty, J. A.
(College of William and Mary Williamsburg, Va., United States)
Miller, W. E.
(College of William and Mary Williamsburg, VA, United States)
Crouch, R. K.
(NASA Langley Research Center Hampton, Va., United States)
Seiber, B. A.
(Virginia Commonwealth University Richmond, Va., United States)
Date Acquired
August 9, 2013
Publication Date
June 1, 1979
Publication Information
Publication: Applied Physics Letters
Volume: 34
Subject Category
Electronics And Electrical Engineering
Accession Number
79A37687
Distribution Limits
Public
Copyright
Other

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