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Internal photoemission in Ag-Al2O3-Al junctionsThe magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.
Document ID
19790056074
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Guedes, J. M. P.
(California Univ. Berkeley, CA, United States)
Slayman, C. W.
(California Univ. Berkeley, CA, United States)
Gustafson, T. K.
(California, University Berkeley, Calif., United States)
Jain, R. K.
(Hughes Research Laboratories Malibu, Calif., United States)
Date Acquired
August 9, 2013
Publication Date
June 1, 1979
Publication Information
Publication: IEEE Journal of Quantum Electronics
Volume: QE-15
Subject Category
Solid-State Physics
Accession Number
79A40087
Funding Number(s)
CONTRACT_GRANT: NSG-2151
CONTRACT_GRANT: F44620-76-C-0100
Distribution Limits
Public
Copyright
Other

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