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state-of-the-art performance of gaalas/gaas avalanche photodiodesGa(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.
Document ID
19790062168
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Law, H. D.
(Rockwell International Science Center Thousand Oaks, CA, United States)
Nakano, K.
(Rockwell International Science Center Thousand Oaks, CA, United States)
Tomasetta, L. R.
(Rockwell International Science Center Thousand Oaks, Calif., United States)
Date Acquired
August 9, 2013
Publication Date
July 15, 1979
Publication Information
Publication: Applied Physics Letters
Volume: 35
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NAS5-23862
Distribution Limits
Public
Copyright
Other