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Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurementsBy means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.
Document ID
19790069834
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Von Roos, O.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
September 1, 1979
Publication Information
Publication: Solid-State Electronics
Volume: 22
Subject Category
Electronics And Electrical Engineering
Accession Number
79A53847
Distribution Limits
Public
Copyright
Other

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