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The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cellsExperimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.
Document ID
19790069918
Document Type
Reprint (Version printed in journal)
Authors
Fossum, J. G.
(Florida Univ. Gainesville, FL, United States)
Lindholm, F. A.
(Florida Univ. Gainesville, FL, United States)
Shibib, M. A.
(Florida, University Gainesville, Fla., United States)
Date Acquired
August 9, 2013
Publication Date
September 1, 1979
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-26
Subject Category
Energy Production And Conversion
Accession Number
79A53931
Distribution Limits
Public
Copyright
Other

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