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Double metalization for VLSIPostsintering process increases yield of double-layer metal conductors to almost 100 percent. When wafers containing double-metalized chips are sintered, metal layers react with oxide film remaining in insulation layer holes, breaking it up so that it no longer impedes electric current. Cooling also mechanically disrupts oxide film.
Document ID
19800000261
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Trotter, J. D. (Mississippi State Univ.)
Wade, T. E. (Mississippi State Univ.)
Date Acquired
August 10, 2013
Publication Date
September 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-25149
Accession Number
80B10261
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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