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More-reliable SOS ion implantationsConducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.
Document ID
19800000262
Document Type
Other - NASA Tech Brief
Authors
Woo, D. S. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
September 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 2
ISSN: 0145-319X
Subject Category
FABRICATION TECHNOLOGY
Report/Patent Number
MFS-25322
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.