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Ohmic contact to GaAs semiconductorMultimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.
Document ID
19800000263
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hovel, H. J.
(IBM Corp.)
Woodall, J. M.
(IBM Corp.)
Date Acquired
August 10, 2013
Publication Date
September 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-12466
Accession Number
80B10263
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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