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Miniature piezoresistive solid state integrated pressure sensorsThe characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pressure sensors utilize rectangular diaphragm as small as 0.0127 x 0.0254 cm and a p-type Wheatstone bridge consisting of diffused piezoresistive elements, 0.000254 cm by 0.00254 cm. These sensors exhibit as high as 0.5 MHz natural frequency and 1 mV/V/psi pressure sensitivity. Fabrication techniques and high frequency results from shock tube testing and low frequency comparison with microphones are presented.
Document ID
19800009164
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Kahng, S. K.
(Oklahoma Univ. Norman, OK, United States)
Date Acquired
September 4, 2013
Publication Date
February 1, 1980
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-CR-162752
Accession Number
80N17424
Funding Number(s)
CONTRACT_GRANT: NSG-1481
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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