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Modelling switching-time effects in high-frequency power conditioning networksPower transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.
Document ID
19800013111
Document Type
Conference Paper
Authors
Owen, H. A. (Duke Univ. Durham, NC, United States)
Sloane, T. H. (Duke Univ. Durham, NC, United States)
Rimer, B. H. (Duke Univ. Durham, NC, United States)
Wilson, T. G. (Duke Univ. Durham, NC, United States)
Date Acquired
August 10, 2013
Publication Date
November 1, 1979
Publication Information
Publication: ESA SPACECAD 1979: Computer-Aided Design of Electron. for Space Appl.
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NSG-3157
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.