Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.