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Outdiffusion of recombination centers from the substrate into LPE layers - GaAsExperimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Jastrzebski, L.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, Mass., United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1979
Publication Information
Publication: Electrochemical Society
Subject Category
Solid-State Physics
Accession Number
Distribution Limits

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