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Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSThe chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.
Document ID
19800034894
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Grunthaner, F. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, P. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lewis, B. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Madhukar, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1979
Subject Category
Solid-State Physics
Accession Number
80A19064
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: DARPA ORDER 611377
Distribution Limits
Public
Copyright
Other

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