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Record Details

Record 24 of 3847
Cosmic ray-induced soft errors in static MOS memory cells
Author and Affiliation:
Sivo, L. L.(General Electric Co., Philadelphia, PA, United States)
Peden, J. C.(General Electric Co., Space Div., Philadelphia, Pa., United States)
Brettschneider, M.(General Electric Co., Philadelphia, PA, United States)
Price, W.(General Electric Co., Philadelphia, PA, United States)
Pentecost, P.(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, Calif., United States)
Abstract: Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.
Publication Date: Dec 01, 1979
Document ID:
19800035599
(Acquired Nov 30, 1995)
Accession Number: 80A19769
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publisher Information: United States
Contract/Grant/Task Num: NAS7-100
Financial Sponsor: NASA; United States
Organization Source: General Electric Co.; Philadelphia, PA, United States
Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 6p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: COSMIC RAYS; ERROR DETECTION CODES; METAL OXIDE SEMICONDUCTORS; PHOTOVOLTAIC CELLS; RADIATION EFFECTS; RANDOM ACCESS MEMORY; CMOS; COMPUTER STORAGE DEVICES; P-N JUNCTIONS; SHIFT REGISTERS; SPACECRAFT COMMUNICATION; STATIC ELECTRICITY; TIME FUNCTIONS
Imprint And Other Notes: (IEEE, U.S. Defense Nuclear Agency, and Jet Propulsion Laboratory, Annual Conference on Nuclear and Space Radiation Effects, 16th, Santa Cruz, Calif., July 17-20, 1979.) IEEE Transactions on Nuclear Science, vol. NS-26, Dec. 1979, p. 5042-5047.
Availability Source: Other Sources
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