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Analysis of long-term ionizing radiation effects in bipolar transistorsThe ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.
Document ID
19800037816
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Stanley, A. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Martin, K. E.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1978
Publication Information
Publication: Radiation Physics and Chemistry
Volume: 12
Subject Category
Electronics And Electrical Engineering
Accession Number
80A21986
Distribution Limits
Public
Copyright
Other

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