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The random walk of a drilling laser beamThe disregistry of holes drilled with a pulse laser beam in 330-micron-thick single-crystal silicon-on-sapphire wafers is examined. The exit positions of the holes were displaced from the hole entrance positions on the opposing face of the wafer, and this random displacement increased with the number of laser pulses required. A model in which the bottom of the drill hole experiences small random displacements during each laser pulse is used to describe the experimental observations. It is shown that the average random displacement caused by each pulse is only a few percent of the hole diameter and can be reduced by using as few laser pulses as necessary while avoiding the cracking and spalling of the wafer that occur with a hole drilled with a single pulse.
Document ID
19800043366
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Anthony, T. R.
(GE Research and Development Center Schenectady, N.Y., United States)
Date Acquired
August 10, 2013
Publication Date
February 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
Lasers And Masers
Accession Number
80A27536
Funding Number(s)
CONTRACT_GRANT: NAS5-25654
Distribution Limits
Public
Copyright
Other

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