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Fracture toughness of siliconThe paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small.
Document ID
19800047921
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chen, C. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Leipold, M. H.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 10, 2013
Publication Date
April 1, 1980
Subject Category
Nonmetallic Materials
Report/Patent Number
ACS PAPER 32-B-78
Accession Number
80A32091
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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