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A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cellsMultiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.
Document ID
19800060951
Document Type
Reprint (Version printed in journal)
Authors
Chi, J. Y.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Mao, B. Y.
(MIT Cambridge, Mass., United States)
Date Acquired
August 10, 2013
Publication Date
July 1, 1980
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-27
Subject Category
Solid-State Physics
Accession Number
80A45121
Distribution Limits
Public
Copyright
Other

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