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Progress on the Dow Corning process for solar-grade siliconThe Dow Corning approach to increasing the resistivity of solar-grade silicon from about 0.04 ohm-cm (40 ppma B) to greater than 0.1 ohm-cm (10 ppma B) involves the use of high-purity raw materials carbothermically reduced in a specially designed electric arc furnace. Final purification occurs during Czochralski crystal growth of a polycrystalline ingot. This small-scale purification technology has resulted in silicon that has been fabricated into solar cells with a maximum AM1 conversion efficiency of 13.4%.
Document ID
19800062529
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Hunt, L. P.
(Dow Corning Corp. Hemlock, MI, United States)
Dosaj, V. D.
(Dow Corning Corp. Hemlock, Mich., United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1979
Subject Category
Chemistry And Materials (General)
Meeting Information
Meeting: Photovoltaic Solar Energy Conference
Location: Berlin
Start Date: April 23, 1979
End Date: April 26, 1979
Accession Number
80A46699
Distribution Limits
Public
Copyright
Other

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