Low-cost, high-efficiency silicon by heat exchanger method and fixed abrasive slicing techniqueThe paper describes the heat exchanger method (HEM) for growing silicon crystals. The problem of ingot cracking was solved by using a graded structure silica crucible, and vacuum processing eliminated expensive high-purity argon. Solar cells fabricated from HEM silicon demonstrated conversion efficiencies up to 15% (AM1) at low cost, using square cross-section, single crystal silicon. A modified multiblade slurry machine was adapted for multiwire fixed abrasive slicing of silicon which uses a diamond attached to wires; this method provides a conversion ratio of 1.08 sq m of wafer per kg of silicon ingot, and produces wafers free of edge chipping with a surface damage of 3-5 microns.
Document ID
19800062530
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Khattak, C. P. (Crystal Systems, Inc. Salem, MA, United States)
Schmid, F. (Crystal Systems, Inc. Salem, Mass., United States)