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Record Details

Record 91 of 15416
Dependence of growth rate of quartz in fused silica on pressure and impurity content
External Online Source: doi:10.1063/1.328346
Author and Affiliation:
Fratello, V. J.(Harvard Univ., Cambridge, MA, United States)
Hays, J. F.(Harvard Univ., Cambridge, MA, United States)
Turnbull, D.(Harvard University, Cambridge, Mass., United States)
Abstract: The effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica were measured. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cu cm/mole. The activation enthalpy for all specimens is extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C(OH) in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.
Publication Date: Sep 01, 1980
Document ID:
19800066556
(Acquired Nov 30, 1995)
Accession Number: 80A50726
Subject Category: SOLID-STATE PHYSICS
Document Type: Journal Article
Publication Information: Journal of Applied Physics; 51; Sept
Publisher Information: United States
Contract/Grant/Task Num: NSF DMR-77-01111; NSF EAR-79-06321; NGL-22-007-247
Financial Sponsor: NASA; United States
Organization Source: Harvard Univ.; Cambridge, MA, United States
Description: 11p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: CRYSTAL GROWTH; IMPURITIES; PRESSURE EFFECTS; QUARTZ CRYSTALS; SILICON DIOXIDE; TEMPERATURE EFFECTS; CHEMICAL COMPOSITION; ENTHALPY; HYDROXYL RADICALS; STOICHIOMETRY
Imprint And Other Notes: Journal of Applied Physics, vol. 51, Sept. 1980, p. 4718-4728. Research supported by the Harvard University
Miscellaneous Notes: 1980, p. 4718-4728. Research supported by the Harvard Universit
Availability Source: Other Sources
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