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Dependence of growth rate of quartz in fused silica on pressure and impurity contentThe effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica were measured. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cu cm/mole. The activation enthalpy for all specimens is extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C(OH) in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.
Document ID
19800066556
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fratello, V. J.
(Harvard Univ. Cambridge, MA, United States)
Hays, J. F.
(Harvard Univ. Cambridge, MA, United States)
Turnbull, D.
(Harvard University Cambridge, Mass., United States)
Date Acquired
August 10, 2013
Publication Date
September 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
Solid-State Physics
Accession Number
80A50726
Funding Number(s)
CONTRACT_GRANT: NGL-22-007-247
CONTRACT_GRANT: NSF EAR-79-06321
CONTRACT_GRANT: NSF DMR-77-01111
Distribution Limits
Public
Copyright
Other

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