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Theory of extrinsic and intrinsic heterojunctions in thermal equilibriumA careful analysis of an abrupt heterojunction consisting of two distinct semiconductors either intrinsic or extrinsic is presented. The calculations apply to a one-dimensional, nondegenerate structure. Taking into account all appropriate boundary conditions, it is shown that the intrinsic Fermi level shows a discontinuity at the interface between the two materials which leads to a discontinuity of the valence band edge equal to the difference in the band gap energies of the two materials. The conduction band edge stays continuous however. This result is independent of possible charged interface states and in sharp contrast to the Anderson model. The reasons for this discrepancy are discussed.
Document ID
19800066950
Document Type
Reprint (Version printed in journal)
Authors
Von Ross, O. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1980
Publication Information
Publication: Solid-State Electronics
Volume: 23
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other