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Record 28 of 1416
Future float zone development in industry
Author and Affiliation:
Sandfort, R. M.(Monsanto Co., Saint Peters, MO, United States)
Abstract: The present industrial requirements for float zone silicon are summarized. Developments desired by the industry in the future are reported. The five most significant problems faced today by the float zone crystal growth method in industry are discussed. They are economic, large diameter, resistivity uniformity, control of carbon, and swirl defects.
Publication Date: Dec 01, 1980
Document ID:
19810010626
(Acquired Nov 14, 1995)
Accession Number: 81N19153
Subject Category: ASTRONAUTICS (GENERAL)
Document Type: Conference Paper
Publication Information: NASA. Marshall Space Flight Center Float Zone Workshop; p. p 78-85
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Monsanto Co.; Saint Peters, MO, United States
Description: 8p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: CRYSTAL GROWTH; INDUSTRIES; LOW GRAVITY MANUFACTURING; PRODUCTION ENGINEERING; SILICON; CRYSTALLIZATION; ECONOMIC DEVELOPMENT; ECONOMIC FACTORS; PRODUCT DEVELOPMENT; QUALITY CONTROL; SPACE COMMERCIALIZATION; TECHNOLOGY ASSESSMENT; USER REQUIREMENTS
Imprint And Other Notes: In NASA. Marshall Space Flight Center Float Zone Workshop p 78-85 (SEE N81-19144 10-12)
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