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Cryogenic switched MOSFET characterizationBoth p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.
Document ID
19810012750
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 4, 2013
Publication Date
March 1, 1981
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
REPT-7165
NASA-CR-166164
Accession Number
81N21279
Funding Number(s)
CONTRACT_GRANT: NASA ORDER A-80598-B
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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